Design of the High Speed IO Based on Bandgap Reference Voltage

Computer & Telecommunication

2017, Vol. 1

Issue (6): 45-47 DOI:

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Design of the High Speed IO Based on Bandgap Reference Voltage

Xu Di，Sun Changjiang，Luo Yaoyu

Shenzhen State Microelectronics Co.,Ltd.

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Abstract This paper introduces a design method through the bandgap voltage to reduce the delay of IO, presents a design of IO with high speed, which meets the requirement of high speed SRAM products. The main design idea of this module is : With bandgap supplying a middle stage voltage，the module can response fast, which reduces the delay of IO. Through the HSPICE simulation results, the demand of 200 Mhz SRAM can be satisfied by this circuit, and the module has been proved reliable by taping out.

Key words： IO high speed flip speed

Published: 16 November 2017

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	Xu Di
	Sun Changjiang
	Luo Yaoyu

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Xu Di, Sun Changjiang, Luo Yaoyu. Design of the High Speed IO Based on Bandgap Reference Voltage. Computer & Telecommunication, 2017, 1(6): 45-47.

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https://www.computertelecom.com.cn/EN/ OR https://www.computertelecom.com.cn/EN/Y2017/V1/I6/45

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