随着微电子技术的不断发展，存储器呈现出高集成度、快速、低功耗的发展趋势。静态随机读写存储器 （SRAM）作为存储器大家庭中的一员，近年来得到了长足的发展。它作为半导体存储器不可缺少的一类产品，在计算机、通信 等高速数据交换系统中得到了广泛的应用。但是随着存储器的容量不断变大，IO翻转速度变快，对电源系统提出了更高的要 求。本文从SRAM应用系统出发，详细介绍了SRAM芯片内电源系统面临的问题，并提出了一种基于系统 级的SRAM电源评估仿真方法。

With the development of microelectronics technology, memory devices have shown the developing trends toward large capacity, fast speed and low power．Static random access memory(SRAM)，as a member of the memory device family, has made significant advances recently, and has been widely applied in computer, communication and high speed data exchange systems ．But as the capacity of the memory continues to increase, IO flip speed becomes faster, and the power system puts forward higher requirements. Based on the SRAM application system, this paper introduces the problems of the SRAM chip power system in detail, and proposes an evaluation method of SRAM power based on system level.